P03 - Unveiling charge carrier dynamics of GaN-based materials through a combined Cathodoluminescence and Kelvin Probe Force Microscopy under variable illumination protocol
- Event
- SMSI 2023
2023-05-08 - 2023-05-11
Nürnberg - Band
- Poster
- Chapter
- Poster
- Author(s)
- P. González-Izquierdo, L. Borowik, M. Charles, P. Le Maitre, N. Rochat, J. Simon, M. Volpert, D. Zoccarato - Grenoble Alpes University, Grenoble (France)
- Pages
- 286 - 287
- DOI
- 10.5162/SMSI2023/P03
- ISBN
- 978-3-9819376-8-8
- Price
- free
Abstract
In this study, we developed a method combining cathodoluminescence (CL) and KPFM under variable illumination to study GaN-based materials, by showing two case studies: n.i.d. GaN-on-Si and GaN/InGaN MQW mesa structures. These two techniques were chosen for their complementarity (CL has access to the radiative recombination and KPFM to radiative and non-radiative recombination) and their nanometric spatial resolution (well suited to study dislocations).