B3.2 - Sensors Based on Tunnel Magnetoresistance - New Technology, New Opportunities
- AMA Conferences 2015
2015-05-19 - 2015-05-21
- Proceedings SENSOR 2015
- B3 - Magnetoresistive Sensors
- J. Paul, C. Schnieders, J. Traute, R. Lehndorff - Sensitec GmbH, Mainz (Germany), A. Conca, B. Leven, B. Hillebrands - Technische Universität Kaiserslautern (Germany), F. Casper, G. Jakob, M. Kläui - Johannes Gutenberg - Universität Mainz (Germany)
- 234 - 239
Magnetoresistive sensors based on the tunnel magnetoresistance effect penetrate more and more the sensor market. They provide high signal amplitude which enables the use of microcontrollers or ASICs without expensive preamplifiers. In addition high-impedance sensors can be designed with little chip area consumption. The combination of these two properties makes TMR sensors ideally suited for battery powered applications. Reliability issues, mainly the long term stability of the ultrathin barrier layer are solved. Angle and position sensors have been established. They reach an absolute accuracy which is close to that of AMR sensors.