D2.4 - Integration of Si-based UV-photodiodes into a 0.35 μm modular CMOS platform
- AMA Conferences 2015
2015-05-19 - 2015-05-21
- Proceedings SENSOR 2015
- D2 - Optical Sensors
- C. Henkel, D. Gäbler, D. Sommer, S. Thiele - X-FAB Semiconductor Foundries AG, Erfurt (Germany), X. Cao - X-FAB Branch Office Plymouth, Devon (United Kingdom), T. Chuan - X-FAB Sarawak, Kuching (Malaysia)
- 541 - 544
Ultraviolet (UV) sensitive Silicon based photodiodes integrated into a high-voltage modular 0.35 μm CMOS technology are presented. An optimized sensitivity higher than 0.1 A/W is obtained for the relevant UV-B (λ = 280-320 nm) and UV-A (λ = 320-380 nm) spectral range for n-on-p and p-on-n photodiodes. In addition, a special UV block layer can be integrated for dark current compensation without further mask count. The photodiodes are stable during long time UV light exposure.