B9.4 Metal/Semiconductor Hetero-interface Engineering for Photocurrent Controlling in Plasmonic Photodetectors
- SMSI 2021
2021-05-03 - 2021-05-06
- SMSI 2021 - Sensors and Instrumentation
- B9 Optical Sensors
- S. Zhuiykov, M. Karbalaei Akbari - Gent University Global Campus, Incheon (South Korea)
- 165 - 166
The heterointerface engineering at metal/semiconductor (MS) hetero-interfaces in Au/Ga2O3/TiO2 plasmonic photosensors enabled the modulation of charge transfer and photoconductance of detectors for adaptive perception of visible optical lights. The photoconductance at heterointerface between plasmonic Au antenna and main TiO2 semiconductor was modulated by deposition of ultra-thin Ga2O3 film at the Au/TiO2 hetero-interface. The fast and improved photoresponsivity were achieved by the surface functionalization of Au plasmonic antenna with N2 doped Ga2O3 ultra-thin film.