B9.4 Metal/Semiconductor Hetero-interface Engineering for Photocurrent Controlling in Plasmonic Photodetectors

Event
SMSI 2021
2021-05-03 - 2021-05-06
digital
Band
SMSI 2021 - Sensors and Instrumentation
Chapter
B9 Optical Sensors
Author(s)
S. Zhuiykov, M. Karbalaei Akbari - Gent University Global Campus, Incheon (South Korea)
Pages
165 - 166
DOI
10.5162/SMSI2021/B9.4
ISBN
978-3-9819376-4-0
Price
free

Abstract

The heterointerface engineering at metal/semiconductor (MS) hetero-interfaces in Au/Ga2O3/TiO2 plasmonic photosensors enabled the modulation of charge transfer and photoconductance of detectors for adaptive perception of visible optical lights. The photoconductance at heterointerface between plasmonic Au antenna and main TiO2 semiconductor was modulated by deposition of ultra-thin Ga2O3 film at the Au/TiO2 hetero-interface. The fast and improved photoresponsivity were achieved by the surface functionalization of Au plasmonic antenna with N2 doped Ga2O3 ultra-thin film.

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