A2.3 - Miniaturized silicon strain gauge elements to accurately measure mechanical quantities
- AMA Conferences 2015
2015-05-19 - 2015-05-21
- Proceedings SENSOR 2015
- A2 - Mechanical Sensors
- T. Frank, M. Khatri, M. Fiedler, A. Gruen, M. Kermann, A. Cyriax, T. Ortlepp - CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt (Germany)
- 61 - 65
Force measurements in microsystems technology are usually based on the piezoresistive effect. Mechanical stress in the doped areas, leads to change of the conduction mechanism, which changes the ohmic resistance. Here, the piezoresistive resistors are monolithically integrated directly into the silicon component by diffusion or implantation. Compared with standard metal strain gauges, the semiconductor integrated resistors have a higher gauge factor and a significantly higher long-term stability. A major advantage of using single-crystal material is the lack of dislocations and grain boundaries. This paper presents some advantageous applications of the developed silicon strain gauge.