8.1.1 - Charge and Capacitance Sensitive Field-Effect Device for Room-Temperature Hydrogen Sensing
- Event
- EUROSENSORS 2026
2026-09-06 - 2026-09-09
Zurich - Band
- Lectures
- Chapter
- Chemical Sensors
- Author(s)
- J. Boudaden, N. M. Mbachu, K. Neumeier, I. Eisele - Fraunhofer Institute for Electronic Microsystems and Solid State Technologies EMFT (Germany)
- Pages
- 244 - 245
- DOI
- 10.5162/eurosensors2026/8.1.1
- ISBN
- 978-3-910600-12-6
- Price
- free
Abstract
We present the sensing properties of a CMOS-compatible Charge- and Capacitance-Sensitive FieldEffect Transistor (CCSFET) operated in gaseous environments. The device comprises two sensing areas, each integrating a chemically sensitive capacitor and a potential probe that together form the floating gate of a MOS transistor. In addition, the potential probe is connected to an operational amplifier (OpAmp), enabling robust electrical readout via both the MOSFET and the OpAmp. The CCSFET is flip-chip packaged onto a flexible substrate, which improves mechanical robustness and ensures reliable signal acquisition. As a demonstration, we investigate room-temperature hydrogen sensing using a thin Pd layer deposited on two different sensing layers, Si ₃ N ₄ and Ta ₂ O ₅ of CCSFT.