8.1.3 - Ultra-Low Crosstalk Thermally-Compensated Monolithic AlGaN/GaN MISHEMT Sensor Array for Robust Gas Detection
- Event
- EUROSENSORS 2026
2026-09-06 - 2026-09-09
Zurich - Band
- Lectures
- Chapter
- Chemical Sensors
- Author(s)
- K. Bouzid, S. S. Venkatachalam, T. Moudakir, A. Juyal, S. Othmani, M. Petit, S. Gautier - Institut Lafayette,Metz (France)
- Pages
- 248 - 249
- DOI
- 10.5162/eurosensors2026/8.1.3
- ISBN
- 978-3-910600-12-6
- Price
- free
Abstract
This work presents the impact of an optimized micro-fabrication process on monolithically integrated AlGaN/GaN MIS-HEMT (High Electron Mobility Transistor) sensors. We demonstrate exceptional elec-trical isolation with inter-device crosstalk, gate and off-state leakage currents in the pA range. This enables a multi-pixel differential measurement scheme to enhance signal stability and reject thermal common mode noise. Compact integration was achieved in an industry grade LCC16 package. Platform performance is validated through temperature compensated hydrogen detection with a thermal Common Mode Rejection Ratio (CMRR) of -60 decibels and operational stability exceeding 180 hours of continuous measurement, repeated over the span of 8 months.