B2.3 - Simultaneous Analysis of Local Device Layer Thickness and Film Stress on Cantilevered MEMS Structures
- Event
- SMSI 2025
2025-05-06 - 2025-05-08
Nürnberg - Band
- Lectures
- Chapter
- B2 - MEMS Resonators
- Author(s)
- D. Huber, C. Schallert, G. Pfusterschmied, U. Schmid - TU Wien, Vienna (Austria)
- Pages
- 85 - 86
- DOI
- 10.5162/SMSI2025/B2.3
- ISBN
- 978-3-910600-06-5
- Price
- free
Abstract
This paper reports on a passive MEMS structure facilitating the local measurement of both, the device layer thickness and residual film stress with white light interferometry (WLI). The structure consists of a released single-side clamped plate (SSCP) and a step-profile etched through the device layer down to a silicon dioxide layer. In doing so, both the static deflection and the thickness are determined, inde-pendent of material parameters, such as the index of refraction or surface roughness. Both key proper-ties can be efficiently measured with the same tailored WLI set-up.